PV04000 - SEMI PV40 - Test Method for In-Line Measurement of Saw Marks on PV Silicon Wafers by a Light Sectioning Technique Using Multiple Line Segments Revision:SEMI PV40-0513 - Current Once modified

Once modified

This Practice is not recommended for use in defect density evaluations

The purpose of this Test Method is to determine the thermal resistance of semiconductor packages using thermal test chips

Some device manufacturers may not require all the GEM capabilities due to differences in their factory automation strategies

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PV04000 - SEMI PV40 - Test Method for In-Line Measurement of Saw Marks on PV Silicon Wafers by a Light Sectioning Technique Using Multiple Line Segments Revision:SEMI PV40-0513 - Current Once modifiedSilicon (Si) wafers for PV applications cut from a Si ingot or Si brick contain a variety of micro and macroscopic crystallographic defects and flaws that may impact the efficiency of a solar cells or the yield of a manufacturing line. Theses defects can be categorized by their origin, either as grown in defects that are generated during the solidification of the Si ingot or as process induced defects that are generated by abrasive processes during