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The recovery of these elements from the silicon bulk is measured between 75% to 125%
It is recommended that wafers be transferred from the MAC to a 450 FOUP and 450 FOUP to MAC
and delivery conditions should be taken into account when planning the testing
edge isolation etch
Bare glass substrates which can be used as array substrates
MF139100 - SEMI MF1391 - Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption Revision:SEMI MF1391-0704 - Superseded The recovery of these elementsThis reference Test Method covers the determination of substitutional carbon concentration in single crystal silicon. Because carbon may also reside in interstitial lattice positions when in concentrations near the solid solubility limit, the results of this Test Method may not be a measure of the total carbon concentration at such concentrations. The useful range of carbon concentration measurable by this Test Method is from the maximum amount of
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