M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers Revision:SEMI M37-0699 - Inactive This waviness is a surface

This waviness is a surface feature where the peaks and valleys of the waves are parallel to the wires of the saw and the direction of the wave is perpendicular to those wires

1  This Specification is specifically directed to silicon homoepitaxial deposits on homogeneous silicon substrates only

1 300mm鏡面研磨単結晶シリコンウェーハ（ノッチ付き， パラメータ指定エッジプロファイル）

and incoming or outgoing inspection

The saw marks consist of topographic features

M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers Revision:SEMI M37-0699 - Inactive This waviness is a surfaceThis test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density InP wafers.